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April 20, 2026, 6:12 p.m.
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(Last updated: April 20, 2026, 6:12 p.m.)
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| ['Bayne S. Power Semiconductor Technology in Pulsed Power Applications 2025.pdf'] | 0 bytes |
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NOTE
SOURCE: Bayne S. Power Semiconductor Technology in Pulsed Power Applications 2025
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COVER
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MEDIAINFO
Textbook in PDF format This book provides students and professionals, including pulsed power designers, with a complete overview of advanced semiconductor devices that can improve the performance of pulsed power systems. The development and advancement of pulsed power technology was driven by research into nuclear fusion and military applications. As technology advances, pulsed power systems are finding their way into industrial and commercial applications. The book begins with a detailed discussion of various applications of pulsed power technology with a primary focus on nuclear fusion. Historically, traditional pulsed-power switches (spark gaps, thyratrons, ignitrons, etc.) have been used in such pulsed power systems. A comparative analysis of the cost and performance specifications of wide bandgap solid-state devices and traditional switches and a review of various pulsed-power architectures is provided. The superior properties of advanced wide bandgap material have enabled the development of high-power, high-temperature, and fast-switching semiconductor devices. Based on the successful integration of wide bandgap technology in high-power traction and renewable energy applications, wide bandgap solid-state switches have the potential to have a profound impact on pulsed-power systems; however, this modern technology introduces added complexity with respect to design, fabrication, and packaging of the semiconductor. The concluding chapters of this book will provide readers with an in-depth look into the key aspects and challenges associated with wide bandgap device fabrication and packaging. Solid-state pulsed power systems have some advantages over traditional pulsed power systems, which will be discussed in this textbook. Chapter 3 begins with a comparative analysis of the cost and performance specifications of SiC devices and traditional pulsed power switches (spark gaps, thyratrons, etc.), which have been key to driving solid-state pulsed power systems due to their highly modular architectures. Switch arrays and single device switch technologies are reviewed, along with their associated technological challenges. Solid-state Marx generators and linear transformer drivers are introduced and selected examples of current state-of-the-art systems are presented. Chapter 4 will give an overview of SiC power device fabrication and will focus on 4H-SiC material and the processing steps required to fabricate low defect density, high-voltage, and high-current power devices. The processing techniques covered in this book can be applied to all power devices, such as metal-oxide-semiconductor field-effect transistor (MOSFET), junction field effect transistor (JFET), bipolar junction transistor (BJT), thyristors, IGBT, P-i-N, and Schottky diode. This chapter covers specific processing areas: SiC etch, substrate thinning, doping, metallization, and Ohmic contact formation. A critical aspect of power device design for high-voltage applications is the edge termination. This book will go into the design and trade-off study of increasing the blocking voltage by implementing a good edge termination technique. Multiple-junction termination extensions (MJTEs) and floating guard-ring edge termination will also be discussed in this chapter. Preface Introduction Applications of Pulsed Power Technology Pulsed Power Architectures for Solid-State Devices Silicon Carbide Power Device Fabrication High-voltage SiC Power Module Packaging
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