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6.7 MB
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June 18, 2025, 1:17 p.m.
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(Last updated: June 18, 2025, 1:17 p.m.)
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| ['Kuntman H. Reliability of CMOS Analog ICs 2025.pdf'] | 0 bytes |
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12.8 MB
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2023-07-01
| Uploaded by indexFroggy | Size 12.8 MB | Health [ 41 /13 ] | Added 2023-07-01 |
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SOURCE: Kuntman H. Reliability of CMOS Analog ICs 2025
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COVER
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MEDIAINFO
Textbook in PDF format This book presents recent advances in reliability investigation of MOS transistors and their applications. Theory and experimental results are discussed, in order to demonstrate the efficacy of the techniques presented. Readers will be enabled to improve their designs in application areas of analog signal processing, ranging from very low frequencies at several Hz levels of biomedical signals to RF applications operating at GHz level, from EEG signals to cognitive radio and encrypted communications or low-noise amplifiers in wireless communications. Although digital signal processing is becoming increasingly more powerful and many types of signal processing have indeed moved to digital domain due to the advances in IC technology, analog circuits are fundamentally necessary in many complex and high performance systems. This is caused by the fact that naturally occurring signals are analog. In other words, analog circuits act as a bridge between the real world and digital systems. In analog signal processing, many circuit topologies including active filters, oscillators, immittance simulators, etc. have been proposed in the literature. Application area of analog signal processing is wide and ranges from very low frequencies at several Hz levels to RF applications operating at GHz level, which means from biomedical and sonar signals to cognitive radio and encrypted communications. Today, modern CMOS technologies are continuously scaling down; but as a result of this, analog designers have serious reliability problems in their designs caused by physical effects. This book gives a review of our previously performed and published works in the open literature on statistical method-based modeling of the experimental studies on degradation in the drain current and threshold voltage of the NMOS and PMOS transistors, including power MOSFETs
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