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Total Size:
5.0 MB
Info Hash:
700A62DC54BAACB891B4A1FB2925936B2A91A68F
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April 22, 2026, 9:23 p.m.
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(Last updated: April 22, 2026, 9:24 p.m.)
| File | Size |
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| Wicht B. Monolithic Integration in E-Mode GaN Technology 2022.pdf | 5.0 MB |
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44.1 MB
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3]
2023-07-01
| Uploaded by indexFroggy | Size 44.1 MB | Health [ 18 /3 ] | Added 2023-07-01 |
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SOURCE: Wicht B. Monolithic Integration in E-Mode GaN Technology 2022
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COVER

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MEDIAINFO
Textbook in PDF format The focus of this series is general topics, and applications about, and for, engineers and scientists on a wide array of applications, methods and advances. Most titles cover subjects such as professional development, education, and study skills, as well as basic introductory undergraduate material and other topics appropriate for a broader and less technical audience. The objective of this book is to provide a systematic and comprehensive insight into monolithic integration in Gallium nitride (GaN). GaN as a wide bandgap material enables compact and efficient power electronics. Since the high-voltage GaN transistor is a lateral device, it can be combined with other passive and active devices on the same die. This will enable Power Management Integrated Circuits (PMICs) that combine power with analog and digital functions. Similar to their silicon counterparts, a GaN power stage can be combined with sensing and control loop circuits. This book investigates challenges and presents solutions on system and circuit level for integrated power, analog and digital functions. An exemplary GaN technology is characterized for its analog and digital integration capabilities. Circuit design techniques are presented which exploit the GaN-specific benefits and also solve the technology-related challenges such as the lack of suitable complementary devices. This way, the book provides a fundamental resource for the relatively new field of GaN PMIC design
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